封装类型 | 28.8X12.6X16.6 |
初始磁导率 Initial permeability μi ±20% | 80000 |
比损耗因子 Relative loss factor Tanδ/μi ×10-6 | - |
比温度系数 Relative temperature coefficient αμiγ ×10-6 | - |
饱和磁通密度 Saturation magnetic flux density Bs (MT) | 1250 |
剩磁 Remanence Br (MT) | - |
矫顽力 Coercivity HC (A/m) | - |
居里温度 Curie temperature Tc (℃) | 570 |
电阻率 Electrical resistivity ρ (Ω·m) | 0.11 |
使用范围 Applied frequency range F (Mhz) | - |
密度 Density d (g/cm³) | 7.3 |
UN-UT2610PZ1.pdf